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NPN Silicon Switching Transistors
PZT 2222 PZT 2222 A
High DC current gain: 0.1 mA to 500 mA q Low collector-emitter saturation voltage q Complementary types: PZT 2907 (PNP) PZT 2907 A (PNP)
q
Type PZT 2222 PZT 2222 A
Marking ZT 2222 ZT 2222 A
Ordering Code (tape and reel) Q62702-Z2026 Q62702-Z2027
Pin Configuration 1 2 3 4 B C E C
Package1) SOT-223
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Total power dissipation, TS = 110 C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth JS

Symbol VCE0 VCB0 VEB0 IC Ptot Tj Tstg
Values PZT 2222 PZT 2222 A 30 60 5 40 75 6 600 1.5 150 - 65 ... + 150
Unit V
mA W C
87 27
K/W
1) 2)
For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm x 40 mm x 1.5 mm/6 cm2 Cu.
Semiconductor Group
1
5.91
PZT 2222 PZT 2222 A
Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 PZT 2222 PZT 2222 A Collector-base breakdown voltage IC = 10 A, IB = 0 PZT 2222 PZT 2222 A Emitter-base breakdown voltage IE = 10 A, IE = 0 Collector-base cutoff current VCB = 50 V, IE = 0 VCB = 50 V, IE = 0, TA = 150 C Emitter-base cutoff current VEB = 3 V, IC = 0 Collector-emitter cutoff current VCE = 30 V, - VBE = 0.5 V Emitter-base cutoff current VCE = 30 V, - VBE = 0.5 V DC current gain1) IC = 0.1 mA, VCE = 10 V IC = 1 mA, VCE = 10 V IC = 10 mA, VCE = 10 V IC = 150 mA, VCE = 10 V IC = 500 mA, VCE = 10 V PZT 2222 PZT 2222 A ICB0 PZT 2222 PZT 2222 A PZT 2222 PZT 2222 A IEB0 ICEV IEBV hFE 35 50 75 100 30 40 - - - - - - - - - 300 - - - - - - - - - - - - - - - - 20 10 20 10 10 50 50 - nA nA
A A
Values typ. max.
Unit
V(BR)CE0 30 40 V(BR)CB0 60 75 V(BR)EB0 5 6 - - - - - - - - - - - -
V
nA
PZT 2222 PZT 2222 A
1)
Pulse test conditions: t 300 s, D = 2 %.
Semiconductor Group
2
PZT 2222 PZT 2222 A
Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter saturation voltage1) IC = 150 mA, IB = 15 mA PZT 2222 PZT 2222 A IC = 500 mA, IB = 50 mA PZT 2222 PZT 2222 A Base-emitter saturation voltage1) IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA PZT 2222 PZT 2222 A PZT 2222 PZT 2222 A VCEsat - - - - VBEsat - - - - - - - - 1.3 1.2 2.6 2.0 - - - - 0.4 0.3 1.6 1.0 V Values typ. max. Unit
AC characteristics Transition frequency IC = 20 mA, VCE = 20 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Input capacitance VEB = 0.5 V, f = 1 MHz VCC = 30 V, IC = 150 mA, IB1 = 15 mA Delay time Rise time VCC = 30 V, IC = 150 mA, IB1 = IB2 = 15 mA Storage time Fall time (see diagrams) fT Cobo Cibo 200 - - - - - - 8 30 MHz pF
td tr tstg tf
- - - -
- - - -
10 25 225 60
ns ns ns ns
1)
Pulse test conditions: t 300 s, D = 2 %.
Semiconductor Group
3
PZT 2222 PZT 2222 A
Input waveform and test circuit for determining delay, rise and turn-on time Turn-on time when switched to ICon = 150 mA; IBon = 15 mA
Input waveform and test circuit for determining storage, fall and turn-off time Turn-off time when switched to ICon = 150 mA; IBon = 15 mA to cut-off with - IBoff = 15 mA
Pulse generator: duty factor pulse duration rise time output impedance
D=2% tp = 200 ns tr 2 ns Zo = 50
Oscillograph: rise time output impedance
tr 5 ns Zi = 10 M
Semiconductor Group
4
PZT 2222 PZT 2222 A
Total power dissipation Ptot = f (TA*; TS) * Package mounted on epoxy
Transition frequency fT = f (IC) VCE = 20 V, f = 100 MHz
Saturation voltage IC = f (VBEsat, VCEsat) hFE = 10
DC current gain hFE = f (IC) VCE = 10 V
Semiconductor Group
5
PZT 2222 PZT 2222 A
Permissible pulse load Ptot max/Ptot DC = f (tp)
Semiconductor Group
6

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